# iDEAL Semiconductor Devices Inc

> iDEAL Semiconductor is a fabless power-chip company in Bethlehem, Pennsylvania, that reworked the humble silicon MOSFET with a patented architecture it calls SuperQ. Instead of chasing exotic materials like gallium nitride or silicon carbide, iDEAL squeezes more conduction out of ordinary silicon on standard CMOS equipment, cutting resistance and switching losses in the transistors that regulate power inside data centers, EVs, solar inverters and motor drives. Founded in 2017 by Mark Granahan, David Jauregui and Michael Burns, the company has raised roughly $75 million and moved its 150 V and 200 V devices into US production.

- **Founded:** 2017
- **Headquarters:** Bethlehem, Pennsylvania, United States
- **Founders:** Mark Granahan (Co-Founder & Chief Executive Officer), David Jauregui (Co-Founder & Chief Technology Officer), Michael Burns (Co-Founder & Executive Chairman)
- **Team size:** ~58 employees
- **Products:** SuperQ Technology, 150 V SuperQ MOSFETs, 200 V SuperQ MOSFETs, 200 V Automotive MOSFET (iS20M028S1CQ)
- **Notable:** Patented SuperQ - described as the first major silicon power MOSFET architecture advance in over 25 years, Raised approximately $75 million across Series A-C, including investment from Applied Ventures, Moved 150 V and 200 V SuperQ MOSFETs into full production at a US foundry (Polar Semiconductor, Minnesota)

## Products & services

- **SuperQ Technology** — A patented asymmetrical RESURF (Reduced Surface Field) silicon power MOSFET architecture using a high-aspect-ratio deep-trench structure and nanometer-thin dielectric films, built on standard CMOS-compatible equipment. Increases the die area used for conduction toward ~95%, reducing on-resistance and switching losses.
- **150 V SuperQ MOSFETs** — Production silicon power MOSFETs (e.g. iS15M7R1S1C, ~6.4 mOhm) targeting data-center, telecom and industrial power conversion with industry-leading figures of merit.
- **200 V SuperQ MOSFETs** — Power MOSFET family (e.g. iS20M6R1S1T) claiming lower resistance than existing silicon and, in some metrics, than GaN; offered in TOLL, TO-220, D2PAK-7L and PDFN packages.
- **200 V Automotive MOSFET (iS20M028S1CQ)** — AEC-Q101 automotive-qualified SuperQ MOSFET rated to 175C junction, in a PDFN 5x6 mm package, for electrified transportation.

## Achievements

- Patented SuperQ - described as the first major silicon power MOSFET architecture advance in over 25 years
- Raised approximately $75 million across Series A-C, including investment from Applied Ventures
- Moved 150 V and 200 V SuperQ MOSFETs into full production at a US foundry (Polar Semiconductor, Minnesota)
- Achieved AEC-Q101 automotive qualification for SuperQ technology in 2025
- Signed a global distribution agreement with Mouser Electronics
- Featured as an IEEE Spectrum case study on the CHIPS Act; founders participated in ~75 Congressional meetings on semiconductor policy

## Latest updates

- **2025-11** — Expanded the SuperQ platform with 150 V MOSFETs positioned for record-low on-resistance and new high-voltage battery-protection use cases.
- **2025-10** — Achieved AEC-Q101 automotive qualification and launched the iS20M028S1CQ 200 V automotive MOSFET.
- **2025-09** — Named Polar Semiconductor as manufacturing partner; SuperQ devices enter production at Polar's Minnesota fab.
- **2025-07** — SuperQ technology enters full production with 150 V and 200 V MOSFETs; signs global distribution deal with Mouser.
- **2023-05** — Publicly launched SuperQ technology and closed a $40M Series C including Applied Ventures.

## Links

- Website: https://idealsemi.com
- LinkedIn: https://www.linkedin.com/company/ideal-semiconductor
- Twitter/X: https://twitter.com/idealsemi
- YouTube: https://youtube.com/@iDEALSemi
- Facebook: https://facebook.com/ideal-semiconductor-374392703088235

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Last updated: 2026-08-20