# Giorgia Longobardi

> Giorgia Longobardi is an Italian engineer and semiconductor entrepreneur based in Cambridge, United Kingdom. She co-founded Cambridge GaN Devices with Professor Florin Udrea in 2016 to commercialise gallium nitride power-device research. Formerly CEO, she became CMO in January 2026 and remains a board director. Her career includes a Cambridge PhD, research in Japan, patented power-device technology and recognition as a 2019 RAEng Engineers Trust Young Engineer of the Year.

- **Role:** Co-founder and Chief Marketing Officer at Cambridge GaN Devices Ltd; board director
- **Organizations:** Cambridge GaN Devices Ltd, University of Cambridge, Gonville & Caius College, Cambridge, International Semiconductor Industry Group (I.S.I.G.), Power Sources Manufacturers Association (PSMA)
- **Nationality:** Italian
- **Education:** Master’s degree with honours in electronics engineering, University of Naples Federico II, PhD in electrical and electronic engineering; industrial collaboration with NXP Semiconductors, University of Cambridge
- **Known for:** RAEng Engineers Trust Young Engineer of the Year, 2019., Business Weekly Woman Entrepreneur of the Year, 2021., Co-winner of the 2016 Cambridge Postdoc Enterprise Competition, securing £20,000 investment for CGD.

## Career timeline

- **2009** — Received an Erasmus scholarship; undertook master’s thesis research at Cambridge.
- **2010** — Graduated from the University of Naples Federico II and began doctoral study at Cambridge.
- **2014** — Completed her PhD at Cambridge.
- **2015** — Received EPSRC follow-on support and a Junior Research Fellowship at Gonville & Caius College.
- **2016** — Co-founded Cambridge GaN Devices with Florin Udrea; joint first prize in the Cambridge Postdoc Enterprise Competition brought £20,000 investment.
- **2017-2018** — Received a JSPS/Royal Society research fellowship and spent a year in Japan, working with Kyushu Institute of Technology and Toshiba.
- **2019** — Named a RAEng Engineers Trust Young Engineer of the Year.
- **2020** — Joined the Royal Academy of Engineering SME Leaders programme.
- **2021** — CGD announced a $9.5 million Series A; Longobardi received Business Weekly’s Woman Entrepreneur of the Year award.
- **2022** — CGD launched its first commercial 650 V GaN power transistor family and secured $19 million in Series B funding.
- **2025** — CGD announced a $32 million Series C on 18 February.
- **2026** — Transitioned from CEO to CMO in January and continued as a board director.

## Achievements

- RAEng Engineers Trust Young Engineer of the Year, 2019.
- Business Weekly Woman Entrepreneur of the Year, 2021.
- Co-winner of the 2016 Cambridge Postdoc Enterprise Competition, securing £20,000 investment for CGD.
- Co-founded a Cambridge spinout that brought its first commercial GaN product family to mass production in 2022.
- Inventor of patents in GaN power devices.
- Led CGD through its $32 million Series C announced in February 2025.

## Latest updates

- **2026-06** — CGD announced a long-term collaboration with NXP on GaN-based power conversion for data-centre, automotive and industrial applications; the announcement identifies Longobardi as CMO and co-founder.
- **2026-01** — Fabio Necco succeeded Longobardi as CEO, effective immediately on 5 January. She became CMO and continued as a CGD board director and I.S.I.G. advisory board member.
- **2025-06** — Co-authored an ISPSD conference paper examining the dynamic reliability of IC-interface GaN HEMTs.
- **2025-02** — CGD announced $32 million in Series C funding to support global expansion.

## Links

- Website: https://camgandevices.com/
- LinkedIn: https://www.linkedin.com/in/giorgia-longobardi-0a0b9364/

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Profile page: https://yespress.io/giorgia-longobardi
Published by YesPress — https://yespress.io
Last updated: 2026-10-23